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| InGaAs-APD/Preamp Receiver FEATURES * * * * * Data rate up to 622Mb/s High Responsibility: typ. 0.85A/W at 1,550nm 30m active area APD chip with GaAs pre-amplifier High temperature operation up to +85C Small co-axial package with single mode fiber FRM5W621KT/LT KT APPLICATIONS * Medium bit rate long haul optical transmission systems at STM-4 (OC-12) DESCRIPTION These APD preamplifiers use an InGaAs APD chip with GaAs IC preamplifier. The KT package is designed for a horizontal PC board mount. The LT package is secured by a vertical flange. Each package is connected with single-mode fiber by Nd: YAG welding. The detector preamplifier is DC coupled and has a low electrical output when the APD is illuminated. LT Edition 1.0 March 1999 1 FRM5W621KT/LT ABSOLUTE MAXIMUM RATINGS (Tc=25C) Parameter Storage Temperature Operating Temperature Supply Voltage APD Supply Voltage APD Reverse Current Symbol Tstg Top Vss VR (Note 1) IR (Note 2) InGaAs-APD/Preamp Receiver Ratings -40 to +85 -40 to +85 -7 to 0 0 to VB 1.0 Unit C C V V mA OPTICAL & ELECTRICAL CHARACTERISTICS (Tc=25C, =1,310/1,550nm, Vss=-5.2V, unless otherwise specified) Parameter APD Responsivity APD Breakdown Voltage Temperature Coefficient of VB AC Transimpedance Symbol R15 R13 VB Zt Test Conditions 1,550nm, M=1 1,310nm, M=1 ID=10A (Note 3) AC-Coupled, f=10MHz, RL=50, Pin <=-20dBm, AC-Coupled, RL=50, M=3 to 15, -3dBm from 1MHz AC-Coupled, RL=50, Average within BW 622Mb/s NRZ, PRBS=223-1, B.E.R.=10-10, VR is set at optimum value Tc=-40 to +85C 622Mb/s NRZ, M=3, PRBS=223-1, B.E.R.=10-10, VR is set at optimum value Tc=-40 to +85C, M=3 Power Supply Current Power Supply Voltage Iss Vss Min. 0.80 0.75 40 0.08 3.0 Limits Typ. 0.85 0.85 50 0.12 3.8 Max. 70 0.15 Unit A/W A/W V V/C k Bandwidth Equivalent Input Noise Current Density BW 467 550 - MHz in - 2.64 -42 3.2 -40 pA/ Hz dBm Sensitivity Pr -5 -41 - -39 - dBm dBm Maximum Overload Po -7 -5.46 -5.2 40 -4.94 dBm mA V Note: (1) VB differs from device to device. VB data is attached to each devices. (2) CW condition (3) =dVB/dTC Edition 1.0 March 1999 2 InGaAs-APD/Preamp Receiver Fig. 1 Output Characteristics 0.8 Output Voltage Peak to Peak, Vpp(V) Relative Response (3dB/div) Tc = 25C Vss=-5.2V CW condition RL=50 10MHz Duty 50% Mark density 50% FRM5W621KT/LT Fig. 2 Relative Frequency Response 0.6 0.4 Ta = 25C Vss=-5.2V AC-Coupled RL=50 Pin=-40dBm = 1,310/1,550nm M = 10 1 10 100 1000 0.2 Slope: Zt ~ 3.8k Frequency, f (MHz) 0 0 50 100 Average Photocurrent, Iave (A) Fig.4 Eye Diagram with a 1,550nm, 622Mb/s NRZ, 223-1 PRBS incident signal Fig.3 Equivalent Input Noise Current Density Relative Input Noise Current Density, in (pA/ Hz) 10 Input optical wave form with Bessel filter Tc = 25C Vss=-5.2V AC-Coupled RL=50 5 Equivalent output wave form at Pin=-42dBm, Tc=25C, M=optimum 1 10 100 Frequency, f (MHz) 1000 500ps/div Edition 1.0 March 1999 3 FRM5W621KT/LT Fig.5 Sensitivity -35 Tc=25C VSS=-5.2V AC-Coupled RL=50 =1,310/1,550nm Bit Error Rate InGaAs-APD/Preamp Receiver Fig.6 Bit Error Rate =1,310/1,550nm 622Mb/s, NRZ Vss=-5.2V M=Optimum Duty 50% Mark Density 50% 10-4 Minimum Sensivity, Pr (dBm) -40 10-6 Ta=+25C 10-8 -40C 10-10 +85C -45 1 10 Multiplication Factor, M 100 10-12 -50 -45 -40 -35 Received Optical Power (dBm) "KT" PACKAGE GND UNIT: mm 2-C1.5 VR VSS 14.00.15 17.00.2 8.40.2 O0.90.1 4-O0.450.05 OUT O6.0 MAX P.C.D. 2.00.2 P.C.D. 4.00.2 2.50.1 4.4 MAX 10.0 MIN 32.0 MAX O7.2 MAX GND VR 2.00.1 4.20.2 1000 MIN VSS 8.40.2 OUT "LT" PACKAGE GND VR VSS VR UNIT: mm VSS 14.00.15 17.00.2 O0.9 P.C.D. 2.00.2 4-O0.450.05 O6.0 MAX P.C.D. 4.00.2 OUT 7.6 MAX 1.00.1 2.50.1 O7.2 MAX OUT GND 10.0 MIN 32.0 MAX 1000 MIN Edition 1.0 March 1999 4 InGaAs-APD/Preamp Receiver For further information please contact: FRM5W621KT/LT FUJITSU COMPOUND SEMICONDUCTOR, INC. Americas & R.O.W. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 55 Schanck Road, Suite A-2 Freehold, NJ 07728-2964, U.S.A. Phone: (732) 303-0282 FAX: (732) 431-3393 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: * Do not put this product into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. www.fcsi.fujitsu.com FUJITSU MIKROELECTRONIK GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ, UK Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 FUJITSU QUANTUM DEVICES, LTD. Asia & Japan 2-7-1, Nishi Shinjuku Shinjuku-ku, Tokyo 163-0721 Japan Phone: 3-5322-3356 FAX: 3-5322-3398 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. (c) 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0199M200 Edition 1.0 March 1999 5 |
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